By Axel Voigt
Epitaxy is a really lively sector of theoretical learn in view that a number of years. it's experimentally well-explored and technologically suitable for skinny movie development. lately robust numerical strategies together with a deep figuring out of the actual and chemical phenomena through the progress method provide the chance to hyperlink atomistic results on the floor to the macroscopic morphology of the movie. The objective of this ebook is to summarize contemporary advancements during this box, with emphasis on multiscale techniques and numerical equipment. It covers atomistic, step-flow, and continuum types and gives a compact evaluate of those techniques. It additionally serves as an creation into this hugely energetic interdisciplinary box of analysis for utilized mathematicians, theoretical physicists and computational fabrics scientists.
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Additional resources for Multiscale Modeling in Epitaxial Growth (International Series of Numerical Mathematics)
C. Wang and G. Ehrlich, Structure, stability, and surface diﬀusion of clusters: Irx on Ir(111), Surf. Sci. 239 (1990), 301. Karsten Albe and Michael M¨ uller Institut f¨ ur Materialwissenschaft Petersenstr. de International Series of Numerical Mathematics, Vol. 149, 29–39 c 2005 Birkh¨ auser Verlag Basel/Switzerland A Multiscale Study of the Epitaxial CVD of Si from Chlorosilanes Carlo Cavallotti, Davide Moscatelli and Alessandro Veneroni Abstract. The deposition of epitaxial thin solid ﬁlms of Si from chlorosilanes was investigated using a multiscale approach.
In order to compute the HCl desorption rate, three diﬀerent surface species that can be considered precursors to the desorption reaction were considered and are sketched in Fig. 1. On a Si(100) surface H and Cl can occupy neighboring positions either as being part of the same surface dimer (Fig. 1 (A)), or as being adsorbed on the same Si atom (Fig. 1 (B)), or, being adsorbed on two diﬀerent neighboring Si adatoms (Fig. 1 (C)). This last species can be viewed in two ways: a species where the Si-Si Epitaxial CVD of Si from Chlorosilanes 33 Figure 1.
A. G. Seebauer, Adsorption of TiCl4 , SiH-4, and Hcl on Si(100) – Application to TiSi-2 chemical vapor deposition and Si etching. J. Electrochem Soc. 140 (1993) 1786–1793.  P. A. G. M. George, Adsorption and desorption-kinetics for Sicl4 on Si(111)7 × 7. J. Chem. Phys. 93 (1990) 2827–2835. Carlo Cavallotti, Davide Moscatelli and Alessandro Veneroni Dept. it International Series of Numerical Mathematics, Vol. 149, 41–57 c 2005 Birkh¨ auser Verlag Basel/Switzerland Oﬀ-lattice Kinetic Monte Carlo Simulations of Strained Heteroepitaxial Growth Michael Biehl, Florian Much and Christian Vey Abstract.
Multiscale Modeling in Epitaxial Growth (International Series of Numerical Mathematics) by Axel Voigt