Download e-book for kindle: Industrial Accelerators and Their Applications by Robert W. Hamm, Marianne E. Hamm

By Robert W. Hamm, Marianne E. Hamm

ISBN-10: 9814307041

ISBN-13: 9789814307048

This designated new booklet is a accomplished assessment of the various present commercial purposes of particle accelerators, written via specialists in every one of those fields. Readers will achieve a extensive realizing of the rules of those functions, the level to which they're hired, and the accelerator expertise applied. The e-book additionally serves as an intensive creation to those fields for non-experts and laymen.

as a result of the elevated curiosity in commercial functions, there's a becoming curiosity between accelerator physicists and lots of different scientists all over the world in figuring out how accelerators are utilized in quite a few purposes. the govt organisations that fund medical examine with accelerators also are looking additional info at the many advertisement purposes which have been or may be constructed with the expertise advancements they're investment. Many industries also are doing extra examine on how they could enhance their items or methods utilizing particle beams

Readership: Physicists, engineers and practitioners in accelerator know-how and purposes.

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Extra resources for Industrial Accelerators and Their Applications

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Current while still using POCL3 doping is doable by running POCl3 deposition with increasing O2 flows and etching major portions of the P-containing oxide coating before the extended drive-in anneal. But both methods increase process time and complexity. With implantation, the efficient and accurate delivery of P dopant to the front PV surface to provide dopant concentrations of ∼ 1 × 1019 P/cm3 after drive-in anneal is easily achieved with modern high-current implant tools. The increase in PV efficiency with an implanted, moderately-doped junction can be substantial (as can be seen in Fig.

32 The sputter removal of the solid target atoms into the arc plasma is encouraged by applying a negative bias to the solid target with respect to the plasma sheath and by guiding plasma ions toward the target with a local solenoid magnetic field. These types of ion sources are particularly useful as sources of ions of metallic and high-melting point elements. When the target area is considerably larger than a Si wafer, such as is the case for implantation of large Si-coated glass plates for fabrication of high performance flat panel computer displays and television screens that are currently fabricated on glass panels of up to 920×730 mm2 area, substantially different methods for ion beam formation and transport are needed.

4. Plasma immersion and ion shower implanters The systems used for very high dose (>1016 ions/cm2 ) and low-energy (a few keV and less) implantation employ a radically simplified design. In “plasma immersion ion implanters” (PIII), the usual beamline components are eliminated, leaving only a means for generating a plasma containing dopant ions and a wafer mounted on a biasable platen. The ions in the plasma formed near the wafer are accelerated into the wafer surface by short (a few µs) negative potential pulses applied to the wafer platen at energies up to the maximum desired value.

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Industrial Accelerators and Their Applications by Robert W. Hamm, Marianne E. Hamm


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