By Fei Yuan
CMOS Circuits for Passive instant Microsystems by means of Fei Yuan This e-book presents a entire remedy of the layout rules and implementation of CMOS circuits and platforms for passive instant microsystems. significant topics coated within the publication comprise: passive instant microsystems, radio-frequency energy harvest, facts encoding, modulators and demodulators, low-power precision voltage references, clock iteration and calibration, and low-power analog-to-digital converters. This book’s contents function an exhaustive survey of lately released paintings during this quick evolving box, and are offered with an emphasis on either the layout ideas and in-depth comparability of the professionals and cons of the designs. This e-book offers the cutting-edge of CMOS circuits for passive instant microsystems. it truly is a useful source for graduate scholars, IC layout engineers and researchers operating during this fast-evolving box. •Systematically offers CMOS circuit implementation of passive instant microsystems, supplying either theoretical history and functional implementation examples; •Provides in-depth comparability of the professionals and cons of alternative topologies of CMOS circuits for passive instant microsystems; •Focuses on highly-applied issues, reminiscent of radio-frequency energy harvesting, voltage multipliers, ultra-low strength present and voltage references for passive instant microsystems, low-power ASK demodulators for passive instant microsystems, distant clock calibration of passive instant microsystems, and low-power analog-to-digital converters.
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Additional resources for CMOS Circuits for Passive Wireless Microsystems
There are two ways to increase the mutual inductance M : increase the coupling coefficient or increase the turn ratio. The former can only be achieved by using a stacked configuration while the latter requires a large number of the turns of the secondary winding. The series resistance of the primary winding can be lowered effectively by increasing the spiral width of the primary winding and by using multiple metal layers connected together Radio-Frequency Power Harvest 38 using vias. The self-inductance of the secondary winding and the coupling coefficient can be increased simultaneously by reducing the width of the spiral of the secondary winding so that more turns can be accommodated for a given silicon area.
21. 22. 22, both capacitors Cv1 and Cv2 have to be adjusted. Lowering the resonant frequency using capacitors will result in a roll-off in the voltage gain. 89). By reducing the resonant frequency using capacitors, the mutual inductance M will remain unchanged while the circuit will operate at a lower frequency. 21. network. 22. Frequency tuning in power-matching and gain-boosting using a step-up transformer network. 90). 23(a) shows the gain rolloff caused by tuning down the resonant frequency of the step-up transformer.
This is because the clocking signals φ and φ only drive the first two coupling capacitors. All other coupling capacitors are connected in series with the stray capacitors. The effectiveness of Cockcroft-Walton voltage multiplier largely diminishes in monolithic integration where stray capacitance Cs and C become comparable. 3. 3 Cockcroft-Walton voltage multiplier . 4, such that both the coupling and stray capacitors are driven by the clocking signals directly . The drawback of Cockcroft-Walton voltage multiplier is therefore eliminated.
CMOS Circuits for Passive Wireless Microsystems by Fei Yuan